Modeling the Turn-Off Characteristics of the Bipolar-MOS Transistor

D. S. Kuo, J. Y. Choi, D. Gian'domenico, Chen-Ming Hu, S. P. Sapp, K. A. Sassaman, R. Bregar

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22 引文 斯高帕斯(Scopus)

摘要

Since the turn-off speed of the new bipolar-MOS power transistor is slow compared to that of a MOSFET, it is important to understand the limiting mechanism and the prospect for future improvement. In this letter, it is demonstrated that the turn-off waveform can be explained by a model based on a simple equivalent circuit and the transistor open-base turn-off process. The model is applied to explore the impact of some process modifications on speed improvement and to study the tradeoff between speed and on-resistaiice.

原文English
頁(從 - 到)211-214
頁數4
期刊IEEE Electron Device Letters
6
發行號5
DOIs
出版狀態Published - 1 1月 1985

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