Modeling the substrate depletion region for GaAs FETs fabricated on semi-insulating substrates

Peter George*, Ping K. Ko, Chen-Ming Hu

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A calculation of the channel-substrate space charge densities and dimensions is required in the formulation of device models for modern GaAs FETs which are fabricated on semi-insulating substrates with multiple deep levels. We describe a procedure to deduce this information from the compensation scheme utilized to obtain semi-insulating behavior.

原文English
頁(從 - 到)165-168
頁數4
期刊Solid State Electronics
32
發行號2
DOIs
出版狀態Published - 1 1月 1989

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