TY - GEN
T1 - Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs
AU - Lin, Chun Yu
AU - Ker, Ming-Dou
PY - 2010
Y1 - 2010
N2 - Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.
AB - Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.
KW - Electrostatic discharges (ESD)
KW - Low-capacitance (low-C)
KW - Modeling
KW - Radio-frequency (RF)
KW - Silicon-controlled rectifier (SCR)
UR - http://www.scopus.com/inward/record.url?scp=78751473821&partnerID=8YFLogxK
U2 - 10.1109/ISNE.2010.5669189
DO - 10.1109/ISNE.2010.5669189
M3 - Conference contribution
AN - SCOPUS:78751473821
SN - 9781424466948
T3 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
SP - 104
EP - 107
BT - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
T2 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010
Y2 - 18 November 2010 through 19 November 2010
ER -