摘要
An extremely simple model for the impurity profile in an ion-implanted channel layer of an IGFET is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel silicon devices.
原文 | English |
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頁(從 - 到) | 116-117 |
頁數 | 2 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 28 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 1月 1981 |