Modeling the Impurity Profile in an Ion-Implanted Layer of an IGFET for the Calculation of Threshold Voltages

Luong Mo Dang, Hiroshi Iwai

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

An extremely simple model for the impurity profile in an ion-implanted channel layer of an IGFET is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel silicon devices.

原文English
頁(從 - 到)116-117
頁數2
期刊IEEE Transactions on Electron Devices
28
發行號1
DOIs
出版狀態Published - 1月 1981

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