摘要
We have developed an accurate equivalent circuit model to simulate the DC I-V, S-parameters and minimum noise figure (NFmin) self-consistently in 0.18μm node MOSFETs. The as-measured NFmin shows a decreasing trend as increasing gate fingers in a multi-fingered layout. The de-embedded intrinsic NFmin shows a weaker finger number dependence than as-measured NFmin and intrinsic NFmin of 2.5 dB and 1.8 dB are obtained for 6 and 64 fingered 0.18 μm MOSFETs, respectively. This result is similar with our recent reports of 0.13 μm node MOSFETs (80nm physical gate length). The weak finger number dependence on NFmin allows achieving low RF noise and power consumption in the small-fingered MOSFET layout.
原文 | English |
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頁面 | 6-10 |
頁數 | 5 |
出版狀態 | Published - 9月 2004 |
事件 | 3rd International Conference on Semiconductor Technology, ISTC2004 - Shanghai, 中國 持續時間: 15 9月 2004 → 17 9月 2004 |
Conference
Conference | 3rd International Conference on Semiconductor Technology, ISTC2004 |
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國家/地區 | 中國 |
城市 | Shanghai |
期間 | 15/09/04 → 17/09/04 |