Modeling RF noise of multi-fingers 0.18-μm node MOSFETS

C. C. Liao*, Z. M. Lai, C. F. Lee, J. T. Lin, D. S. Yu, Albert Chin

*此作品的通信作者

    研究成果同行評審

    摘要

    We have developed an accurate equivalent circuit model to simulate the DC I-V, S-parameters and minimum noise figure (NFmin) self-consistently in 0.18μm node MOSFETs. The as-measured NFmin shows a decreasing trend as increasing gate fingers in a multi-fingered layout. The de-embedded intrinsic NFmin shows a weaker finger number dependence than as-measured NFmin and intrinsic NFmin of 2.5 dB and 1.8 dB are obtained for 6 and 64 fingered 0.18 μm MOSFETs, respectively. This result is similar with our recent reports of 0.13 μm node MOSFETs (80nm physical gate length). The weak finger number dependence on NFmin allows achieving low RF noise and power consumption in the small-fingered MOSFET layout.

    原文English
    頁面6-10
    頁數5
    出版狀態Published - 9月 2004
    事件3rd International Conference on Semiconductor Technology, ISTC2004 - Shanghai, 中國
    持續時間: 15 9月 200417 9月 2004

    Conference

    Conference3rd International Conference on Semiconductor Technology, ISTC2004
    國家/地區中國
    城市Shanghai
    期間15/09/0417/09/04

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