Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack

Chih Hong Hwang*, Yiming Li

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

The work-function fluctuation (WKF) induced threshold voltage variability (σVth) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of nano-device. Then, the influences of grain size of metal and aspect ratio of device geometry on σVth are drawn. The analytical expression of WKF-induced σVth can outlook the effectiveness of the fluctuation suppression approaches and benefits the design of nanoscale transistors.

原文English
主出版物標題Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
頁面74-75
頁數2
DOIs
出版狀態Published - 2010
事件2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
持續時間: 26 4月 201028 4月 2010

出版系列

名字Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
國家/地區Taiwan
城市Hsin Chu
期間26/04/1028/04/10

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