@inproceedings{af80518a9283463f94174536b2bb32bf,
title = "Modeling of the parasitic resistance effect in Poly-Si TFTs with LDD structure",
abstract = "In this study, the model of poly-Si TFTs with LDD structure had been proposed. Firstly, parasitic resistance parameters were extracted from devices with various channel length and LDD length. Then, an accurate I-V model was constructed by combining basic TFT model (RPI model) and the parasitic resistance effects. The model had been verified for devices with channel length larger than 6 um. The transconductance behavior in both linear region and saturation region are also well explained by our proposed model.",
author = "Kao, {Shih Chin} and Hsiao-Wen Zan and Chen, {Shih Ching}",
year = "2005",
month = feb,
language = "English",
isbn = "9572852221",
series = "International Display Manufacturing Conference and Exhibition, IDMC'05",
pages = "529--532",
editor = "{David Shieh}, H.P. and F.C. Chen",
booktitle = "Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05",
note = "International Display Manufacturing Conference and Exhibition, IDMC'05 ; Conference date: 21-02-2005 Through 24-02-2005",
}