Modeling of the parasitic resistance effect in Poly-Si TFTs with LDD structure

Shih Chin Kao*, Hsiao-Wen Zan, Shih Ching Chen

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this study, the model of poly-Si TFTs with LDD structure had been proposed. Firstly, parasitic resistance parameters were extracted from devices with various channel length and LDD length. Then, an accurate I-V model was constructed by combining basic TFT model (RPI model) and the parasitic resistance effects. The model had been verified for devices with channel length larger than 6 um. The transconductance behavior in both linear region and saturation region are also well explained by our proposed model.

原文English
主出版物標題Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
編輯H.P. David Shieh, F.C. Chen
頁面529-532
頁數4
出版狀態Published - 1 十二月 2005
事件International Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
持續時間: 21 二月 200524 二月 2005

出版系列

名字International Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
國家/地區Japan
城市Taipei
期間21/02/0524/02/05

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