Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory

Keyphrases

• Read Disturb 100%
• Resistive Random Access Memory (ReRAM) 100%
• Current Degradation 100%
• Tungsten Oxide 100%
• Inverse Power Law 100%
• Oxygen Ions 66%
• Temperature Effect 33%
• Analytical Model 33%
• Pre-oxidation 33%
• Oxygen Vacancy 33%
• Vacancy Densities 33%
• Read Operation 33%
• Memory Cell 33%
• Power Factor 33%
• Induced Degradation 33%
• Two-stage Evolution 33%
• Voltage Effect 33%
• Oxygen Reduction 33%
• Ion Hopping 33%
• Read Voltages 33%
• Ion Activation 33%
• Power Law Dependence 33%

Engineering

• Resistive 100%
• Read Disturb 100%
• Oxygen Ion 66%
• Induced Degradation 66%
• Analytical Model 33%
• Oxygen Vacancy 33%
• Reoxidation 33%
• Power Factor 33%
• Read Voltage 33%

Material Science

• Oxide Compound 100%
• Tungsten 100%
• Density 50%
• Oxidation Reaction 50%
• Oxygen Vacancy 50%