Modeling of pocket implanted MOSFETs for anomalous analog behavior

Kanyu Mark Cao; Weidong Liu; Xiaodong Jin; Karthik Vasanth; Keith Green; John Krick; Tom Vrotsos; Chen-Ming Hu

doi:10.1109/IEDM.1999.823872

Modeling of pocket implanted MOSFETs for anomalous analog behavior

Kanyu Mark Cao^*, Weidong Liu, Xiaodong Jin, Karthik Vasanth, Keith Green, John Krick, Tom Vrotsos, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

74 引文斯高帕斯（Scopus）

摘要

Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18μm technology. This model is suitable for SPICE modeling.

原文	English
頁（從 - 到）	171-174
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.823872
出版狀態	Published - 1999
事件	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 5 12月 1999 → 8 12月 1999

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10.1109/IEDM.1999.823872

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abstract = "Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18μm technology. This model is suitable for SPICE modeling.",

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AU - Cao, Kanyu Mark

AU - Liu, Weidong

AU - Jin, Xiaodong

AU - Vasanth, Karthik

AU - Green, Keith

AU - Krick, John

AU - Vrotsos, Tom

AU - Hu, Chen-Ming

PY - 1999

Y1 - 1999

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AB - Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18μm technology. This model is suitable for SPICE modeling.

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DO - 10.1109/IEDM.1999.823872

M3 - Conference article

AN - SCOPUS:0033325337

SN - 0163-1918

SP - 171

EP - 174

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Modeling of pocket implanted MOSFETs for anomalous analog behavior

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