Modeling finger number dependence on RF noise to 10 GHz in 0.13μm node MOSFETs with 80nm gate length

M. C. King*, Z. M. Lai, C. H. Huang, C. F. Lee, M. W. Ma, C. M. Huang, Yun Chang, Albert Chin

*此作品的通信作者

    研究成果: Paper同行評審

    28 引文 斯高帕斯(Scopus)

    摘要

    We have modeled the as-measured and deembedded NFmin on malti-fingers 0.13 μm node MOSFETs. In contrast to the as-measured large NF.min value and strong dependence on parallel gate fingers, the de-embedded NFmin has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of Rggm and drain hot carrier noise but both have weak dependence on finger numbers.

    原文English
    頁面171-174
    頁數4
    出版狀態Published - 20 9月 2004
    事件Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, 美國
    持續時間: 6 6月 20048 6月 2004

    Conference

    ConferenceDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
    國家/地區美國
    城市Fort Worth, TX
    期間6/06/048/06/04

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