Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies

Hsin Hui Huang; Chen Yi Cho; Tzu Yao Lin; Tz Shiuan Huang; Ming Hung Wu; I. Ting Wang; Yu Kai Chang; Chen Han Chou; Pei Jean Liao; Hsin Yun Yang; Yu De Lin; Po Chun Yeh; Shyh Shyuan Sheu; Tuo Hung Hou

doi:10.1109/IEDM45625.2022.10019559

Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies

Hsin Hui Huang^*, Chen Yi Cho, Tzu Yao Lin, Tz Shiuan Huang, Ming Hung Wu, I. Ting Wang, Yu Kai Chang, Chen Han Chou, Pei Jean Liao, Hsin Yun Yang, Yu De Lin, Po Chun Yeh, Shyh Shyuan Sheu, Tuo Hung Hou

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

摘要

The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

原文	English
主出版物標題	2022 International Electron Devices Meeting, IEDM 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	1351-1354
頁數	4
ISBN（電子）	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019559
出版狀態	Published - 2022
事件	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States 持續時間: 3 12月 2022 → 7 12月 2022

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2022-December
ISSN（列印）	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
國家/地區	United States
城市	San Francisco
期間	3/12/22 → 7/12/22

存取文件

10.1109/IEDM45625.2022.10019559

其它文件與鏈接

Link to publication in Scopus

引用此

Huang, H. H., Cho, C. Y., Lin, T. Y., Huang, T. S., Wu, M. H., Wang, I. T., Chang, Y. K., Chou, C. H., Liao, P. J., Yang, H. Y., Lin, Y. D., Yeh, P. C., Sheu, S. S., & Hou, T. H. (2022). Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. 於 2022 International Electron Devices Meeting, IEDM 2022 (頁 1351-1354). (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019559

@inproceedings{f7bf3d5f7ac5477599a8543e7348f4da,

title = "Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies",

abstract = "The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.",

author = "Huang, {Hsin Hui} and Cho, {Chen Yi} and Lin, {Tzu Yao} and Huang, {Tz Shiuan} and Wu, {Ming Hung} and Wang, {I. Ting} and Chang, {Yu Kai} and Chou, {Chen Han} and Liao, {Pei Jean} and Yang, {Hsin Yun} and Lin, {Yu De} and Yeh, {Po Chun} and Sheu, {Shyh Shyuan} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019559",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1351--1354",

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address = "United States",

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Huang, HH, Cho, CY, Lin, TY, Huang, TS, Wu, MH, Wang, IT, Chang, YK, Chou, CH, Liao, PJ, Yang, HY, Lin, YD, Yeh, PC, Sheu, SS & Hou, TH 2022, Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. 於 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, 卷 2022-December, Institute of Electrical and Electronics Engineers Inc., 頁 1351-1354, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019559

Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. / Huang, Hsin Hui; Cho, Chen Yi; Lin, Tzu Yao 等.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1351-1354 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies

AU - Huang, Hsin Hui

AU - Cho, Chen Yi

AU - Lin, Tzu Yao

AU - Huang, Tz Shiuan

AU - Wu, Ming Hung

AU - Wang, I. Ting

AU - Chang, Yu Kai

AU - Chou, Chen Han

AU - Liao, Pei Jean

AU - Yang, Hsin Yun

AU - Lin, Yu De

AU - Yeh, Po Chun

AU - Sheu, Shyh Shyuan

AU - Hou, Tuo Hung

PY - 2022

Y1 - 2022

N2 - The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

AB - The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Electron Devices Meeting, IEDM 2022

Y2 - 3 December 2022 through 7 December 2022

ER -

Huang HH, Cho CY, Lin TY, Huang TS, Wu MH, Wang IT 等. Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. 於 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1351-1354. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019559