Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies

Hsin Hui Huang*, Chen Yi Cho, Tzu Yao Lin, Tz Shiuan Huang, Ming Hung Wu, I. Ting Wang, Yu Kai Chang, Chen Han Chou, Pei Jean Liao, Hsin Yun Yang, Yu De Lin, Po Chun Yeh, Shyh Shyuan Sheu, Tuo Hung Hou

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1351-1354
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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