Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies

Hsin Hui Huang*, Chen Yi Cho, Tzu Yao Lin, Tz Shiuan Huang, Ming Hung Wu, I. Ting Wang, Yu Kai Chang, Chen-Han Chou, Pei Jean Liao, Hsin Yun Yang, Yu De Lin, Po Chun Yeh, Shyh Shyuan Sheu, Tuo Hung Hou

*此作品的通信作者

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1351-1354
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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