TY - GEN
T1 - Modeling and minimizing variations of gate-all-around multiple-channel nanowire TFTs
AU - Huang, Po Chun
AU - Chen, Lu An
AU - Chen, C. C.
AU - Sheu, Jeng-Tzong
PY - 2011
Y1 - 2011
N2 - In this paper we describe the electrical performance of poly-Si gate-all-around (GAA) thin-film transistors (TFTs) featuring multiple-channel nanowires (NWs). To minimize the variation in the electrical characteristics of these TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH 3 plasma treatment. Relative to a tri-gate structure, the GAA devices exhibited superior performance. In addition, the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Devices featuring 16-cnannel present the minimized standard deviation in both threshold voltage and subthreshold swing (30 mV and 11.4 mV/dec, respectively). The device-to-device variation due to random grain-size distribution in poly-Si GAA NW TFT was modeled by Poisson area scatter model. The electrical measurements of poly-Si GAA NW TFTs and the model are in agreement. Finally, NH 3 plasma treatment of the GAA TFTs featuring multiple channels further decreased the electrical variations and improved the device performance.
AB - In this paper we describe the electrical performance of poly-Si gate-all-around (GAA) thin-film transistors (TFTs) featuring multiple-channel nanowires (NWs). To minimize the variation in the electrical characteristics of these TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH 3 plasma treatment. Relative to a tri-gate structure, the GAA devices exhibited superior performance. In addition, the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Devices featuring 16-cnannel present the minimized standard deviation in both threshold voltage and subthreshold swing (30 mV and 11.4 mV/dec, respectively). The device-to-device variation due to random grain-size distribution in poly-Si GAA NW TFT was modeled by Poisson area scatter model. The electrical measurements of poly-Si GAA NW TFTs and the model are in agreement. Finally, NH 3 plasma treatment of the GAA TFTs featuring multiple channels further decreased the electrical variations and improved the device performance.
KW - Poisson area scatter model
KW - gate-all-around (GAA)
KW - multiple nanowire channel
KW - thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=84858955580&partnerID=8YFLogxK
U2 - 10.1109/NANO.2011.6144567
DO - 10.1109/NANO.2011.6144567
M3 - Conference contribution
AN - SCOPUS:84858955580
SN - 9781457715143
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 600
EP - 603
BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Y2 - 15 August 2011 through 19 August 2011
ER -