Model for photoresist-induced charging damage in ultra-thin gate oxides

Horng-Chih Lin; Chao-Hsin Chien; Meng Feng Wang; Tiao Yuan Huang; Chun Yen Chang

doi:10.1109/PPID.1997.596761

Model for photoresist-induced charging damage in ultra-thin gate oxides

Horng-Chih Lin^*, Chao-Hsin Chien, Meng Feng Wang, Tiao Yuan Huang, Chun Yen Chang

^*此作品的通信作者

電子研究所

研究成果: Paper › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O₂ plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.

原文	English
頁面	247-250
頁數	4
DOIs	https://doi.org/10.1109/PPID.1997.596761
出版狀態	Published - 1997
事件	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA 持續時間: 13 5月 1997 → 14 5月 1997

Conference

Conference	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
城市	Monterey, CA, USA
期間	13/05/97 → 14/05/97

存取文件

10.1109/PPID.1997.596761

其它文件與鏈接

Link to publication in Scopus

引用此

@conference{4138cf6656b24a07a17fc0035e681718,

title = "Model for photoresist-induced charging damage in ultra-thin gate oxides",

abstract = "The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.",

author = "Horng-Chih Lin and Chao-Hsin Chien and Wang, {Meng Feng} and Huang, {Tiao Yuan} and Chang, {Chun Yen}",

year = "1997",

doi = "10.1109/PPID.1997.596761",

language = "English",

pages = "247--250",

note = "Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage ; Conference date: 13-05-1997 Through 14-05-1997",

}

TY - CONF

T1 - Model for photoresist-induced charging damage in ultra-thin gate oxides

AU - Lin, Horng-Chih

AU - Chien, Chao-Hsin

AU - Wang, Meng Feng

AU - Huang, Tiao Yuan

AU - Chang, Chun Yen

PY - 1997

Y1 - 1997

N2 - The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.

AB - The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.

UR - http://www.scopus.com/inward/record.url?scp=0030685554&partnerID=8YFLogxK

U2 - 10.1109/PPID.1997.596761

DO - 10.1109/PPID.1997.596761

M3 - Paper

AN - SCOPUS:0030685554

SP - 247

EP - 250

T2 - Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage

Y2 - 13 May 1997 through 14 May 1997

ER -

Model for photoresist-induced charging damage in ultra-thin gate oxides

摘要

Conference

存取文件

其它文件與鏈接

指紋

引用此