Model based sub-resolution assist features using an inverse lithography method

Jue Chin Yu*, Pei-Chen Yu, Hsueh Yung Chao

*此作品的通信作者

研究成果: Conference article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The conventional segment-based OPC approach has been applied successfully for many CMOS generations and is currently favored. However, Inverse lithography technology (ILT) is a promising candidate for next-generation optical proximity correction (OPC). Still, there are issues that need to be thoroughly addressed and further optimized. In this work, we propose a model-based pre-OPC flow where the sizing of drawn patterns and placement of surrounding sub-resolution assist features (SRAF) are simultaneously generated in a single iteration using an ILT method. The complex patterns can then be simplified for a conventional OPC solution.

原文English
文章編號714014
期刊Proceedings of SPIE - The International Society for Optical Engineering
7140
DOIs
出版狀態Published - 1 12月 2008
事件Lithography Asia 2008 - Taipei, Taiwan
持續時間: 4 11月 20086 11月 2008

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