摘要
GaN-based bottom-up photonic quasicrystal (PQC) lasers were realized and characterized. Photonic quasicrystal nanopillars were realized by nanoimprint technique and selective area growth. Highly localized mode was identified for the first time in GaN-based PQC lasers.
原文 | English |
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文章編號 | 6348389 |
頁(從 - 到) | 171-172 |
頁數 | 2 |
期刊 | Conference Digest - IEEE International Semiconductor Laser Conference |
DOIs | |
出版狀態 | Published - 10 10月 2012 |
事件 | 23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, 美國 持續時間: 7 10月 2012 → 10 10月 2012 |