MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength

Hao-Chung Kuo; Y. S. Chang; C. F. Lin; Tien-Chang Lu; S. C. Wang

doi:10.1016/j.jcrysgro.2003.11.027

MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength

Hao-Chung Kuo^*, Y. S. Chang, C. F. Lin, Tien-Chang Lu, S. C. Wang

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

摘要

We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼0.6 mW/mA. The threshold current change is less than 0.2mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

原文	English
頁（從 - 到）	355-358
頁數	4
期刊	Journal of Crystal Growth
卷	261
發行號	2-3
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.11.027
出版狀態	Published - 19 1月 2004
事件	Proceedings of the 11th Biennia, (US) Workshop on Organometall - Keystone, CO, 美國持續時間: 20 7月 2003 → 24 7月 2003

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10.1016/j.jcrysgro.2003.11.027

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@article{80314ec1d54e4a75a4e325a06e11ea7e,

title = "MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength",

abstract = "We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼0.6 mW/mA. The threshold current change is less than 0.2mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.",

keywords = "A1. Characterization, A3. Metalorganic chemical vapor deposition, B2. Semiconducting gallium arsenide, B2. Semiconducting quaternary alloys, B3. Laser diodes, B3. Optical fiber devices",

author = "Hao-Chung Kuo and Chang, {Y. S.} and Lin, {C. F.} and Tien-Chang Lu and Wang, {S. C.}",

year = "2004",

month = jan,

day = "19",

doi = "10.1016/j.jcrysgro.2003.11.027",

language = "English",

volume = "261",

pages = "355--358",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2-3",

note = "Proceedings of the 11th Biennia, (US) Workshop on Organometall ; Conference date: 20-07-2003 Through 24-07-2003",

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TY - JOUR

T1 - MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength

AU - Kuo, Hao-Chung

AU - Chang, Y. S.

AU - Lin, C. F.

AU - Lu, Tien-Chang

AU - Wang, S. C.

PY - 2004/1/19

Y1 - 2004/1/19

N2 - We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼0.6 mW/mA. The threshold current change is less than 0.2mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

AB - We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼0.6 mW/mA. The threshold current change is less than 0.2mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

KW - A1. Characterization

KW - A3. Metalorganic chemical vapor deposition

KW - B2. Semiconducting gallium arsenide

KW - B2. Semiconducting quaternary alloys

KW - B3. Laser diodes

KW - B3. Optical fiber devices

UR - http://www.scopus.com/inward/record.url?scp=0348046460&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2003.11.027

DO - 10.1016/j.jcrysgro.2003.11.027

M3 - Conference article

AN - SCOPUS:0348046460

SN - 0022-0248

VL - 261

SP - 355

EP - 358

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

T2 - Proceedings of the 11th Biennia, (US) Workshop on Organometall

Y2 - 20 July 2003 through 24 July 2003

ER -

MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength

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