MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength

Hao-Chung Kuo*, Y. S. Chang, C. F. Lin, Tien-Chang Lu, S. C. Wang

*此作品的通信作者

研究成果: Conference article同行評審

摘要

We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼0.6 mW/mA. The threshold current change is less than 0.2mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

原文English
頁(從 - 到)355-358
頁數4
期刊Journal of Crystal Growth
261
發行號2-3
DOIs
出版狀態Published - 19 1月 2004
事件Proceedings of the 11th Biennia, (US) Workshop on Organometall - Keystone, CO, United States
持續時間: 20 7月 200324 7月 2003

指紋

深入研究「MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength」主題。共同形成了獨特的指紋。

引用此