@inproceedings{e470cad7fc584e18b7ef039b9b14adcf,
title = "Mobility improvement of HfO2 LTPS TFTs with nitrogen implantation",
abstract = "In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with high-k HfO2 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Various nitrogen does 5 × 1013 and 5 × 1014cm-2 were implanted after gate dielectric deposition. Significant improvement 94. 4% and 74.4% on transconductance Gm and field effect mobility, respectively, are observed due to the nitrogen implantation. In addition, a substantial gate leakage current reduction over four orders is also obtained to decrease undesirable power dissipation. Finally, a high performance LTPS-TFT with low subthreshold swing 0. 177 V/decade and threshold voltage about 1 V can be achieved without any other hydrogen plasma passivation treatments.",
keywords = "HfO, High-k gate dielectric, Nitrogen implantation, Thin-film transistors (TFTs)",
author = "Ma, {Ming Wen} and Yang, {Tsung Yu} and Kao, {Kuo Hsing} and Su, {Chun Jung} and Chen, {Chih Yang} and Tien-Sheng Chao and Lei, {Tan Fu}",
year = "2007",
month = mar,
language = "English",
isbn = "9787561752289",
series = "AD'07 - Proceedings of Asia Display 2007",
pages = "674--677",
booktitle = "AD'07 - Proceedings of Asia Display 2007",
note = "Asia Display 2007, AD'07 ; Conference date: 12-03-2007 Through 16-03-2007",
}