Mobility improvement of HfO2 LTPS TFTs with nitrogen implantation

Ming Wen Ma*, Tsung Yu Yang, Kuo Hsing Kao, Chun Jung Su, Chih Yang Chen, Tien-Sheng Chao, Tan Fu Lei

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with high-k HfO2 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Various nitrogen does 5 × 1013 and 5 × 1014cm-2 were implanted after gate dielectric deposition. Significant improvement 94. 4% and 74.4% on transconductance Gm and field effect mobility, respectively, are observed due to the nitrogen implantation. In addition, a substantial gate leakage current reduction over four orders is also obtained to decrease undesirable power dissipation. Finally, a high performance LTPS-TFT with low subthreshold swing 0. 177 V/decade and threshold voltage about 1 V can be achieved without any other hydrogen plasma passivation treatments.

原文English
主出版物標題AD'07 - Proceedings of Asia Display 2007
頁面674-677
頁數4
出版狀態Published - 3月 2007
事件Asia Display 2007, AD'07 - Shanghai, China
持續時間: 12 3月 200716 3月 2007

出版系列

名字AD'07 - Proceedings of Asia Display 2007
1

Conference

ConferenceAsia Display 2007, AD'07
國家/地區China
城市Shanghai
期間12/03/0716/03/07

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