Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization

Yung Chun Wu; Ting Chang Chang; Po-Tsun Liu; Yuan Chun Wu; Cheng Wei Chou; Chun Hao Tu; Jen Chung Lou; Chun Yen Chang

doi:10.1063/1.2076436

Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization

Yung Chun Wu, Ting Chang Chang, Po-Tsun Liu, Yuan Chun Wu, Cheng Wei Chou, Chun Hao Tu, Jen Chung Lou, Chun Yen Chang

光電工程學系

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

This work presents a method for enhancing the mobility of polycrystalline-Si (poly-Si) thin-film transistors (TFTs) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels. Experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of the poly-Si grains increased. The PDMILC poly-Si TFT with ten nanowire channels (M10) had the greatest field-effect mobility, 109.34 cm2 V s and the lowest subthreshold swing, 0.23 Vdec, at a gate length of 2 μm. The field-effect mobility also increased as the gate length in the M10 PDMILC poly-Si TFT device declined, because the number of poly-Si grain-boundary defects was reduced.

原文	English
文章編號	143504
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	87
發行號	14
DOIs	https://doi.org/10.1063/1.2076436
出版狀態	Published - 3 10月 2005

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10.1063/1.2076436

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title = "Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization",

abstract = "This work presents a method for enhancing the mobility of polycrystalline-Si (poly-Si) thin-film transistors (TFTs) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels. Experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of the poly-Si grains increased. The PDMILC poly-Si TFT with ten nanowire channels (M10) had the greatest field-effect mobility, 109.34 cm2 V s and the lowest subthreshold swing, 0.23 Vdec, at a gate length of 2 μm. The field-effect mobility also increased as the gate length in the M10 PDMILC poly-Si TFT device declined, because the number of poly-Si grain-boundary defects was reduced.",

author = "Wu, {Yung Chun} and Chang, {Ting Chang} and Po-Tsun Liu and Wu, {Yuan Chun} and Chou, {Cheng Wei} and Tu, {Chun Hao} and Lou, {Jen Chung} and Chang, {Chun Yen}",

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AU - Wu, Yung Chun

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Wu, Yuan Chun

AU - Chou, Cheng Wei

AU - Tu, Chun Hao

AU - Lou, Jen Chung

AU - Chang, Chun Yen

PY - 2005/10/3

Y1 - 2005/10/3

N2 - This work presents a method for enhancing the mobility of polycrystalline-Si (poly-Si) thin-film transistors (TFTs) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels. Experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of the poly-Si grains increased. The PDMILC poly-Si TFT with ten nanowire channels (M10) had the greatest field-effect mobility, 109.34 cm2 V s and the lowest subthreshold swing, 0.23 Vdec, at a gate length of 2 μm. The field-effect mobility also increased as the gate length in the M10 PDMILC poly-Si TFT device declined, because the number of poly-Si grain-boundary defects was reduced.

AB - This work presents a method for enhancing the mobility of polycrystalline-Si (poly-Si) thin-film transistors (TFTs) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels. Experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of the poly-Si grains increased. The PDMILC poly-Si TFT with ten nanowire channels (M10) had the greatest field-effect mobility, 109.34 cm2 V s and the lowest subthreshold swing, 0.23 Vdec, at a gate length of 2 μm. The field-effect mobility also increased as the gate length in the M10 PDMILC poly-Si TFT device declined, because the number of poly-Si grain-boundary defects was reduced.

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Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization

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