Mobility enhancement of pattern-dependent metal-induced lateral crystallization polysilicon thin-film transistors with different dimensions

Yung Chun Wu; Yuan Chun Wu; Cheng Wei Chou; Chun Hao Tu; Jen Chung Lou; Chun Yen Chang; Ting Chang Chang; Po-Tsun Liu

doi:10.1889/1.2036421

Mobility enhancement of pattern-dependent metal-induced lateral crystallization polysilicon thin-film transistors with different dimensions

Yung Chun Wu, Yuan Chun Wu, Cheng Wei Chou, Chun Hao Tu, Jen Chung Lou, Chun Yen Chang, Ting Chang Chang, Po-Tsun Liu

光電工程學系

研究成果: Conference article › 同行評審

摘要

A new method for enhancing the mobility of the polysilicon thin-film transistors (poly-Si TFT) by pattern-dependent metal-induced-lateral- crystallization (PDMILC) with different device dimensions were successfully demonstrated and characterized. The experimental results indicate that the field effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of its poly-Si grain was increased. For the gate length of 2 um, the ten nano-wire channels (MIO) PDMILC poly-Si TFT had the greatest mobility of 107.79 cm²/Vs and the smallest subthreshold swing (SS) of 0.23 V/dec. The mobility also increased with the decline in the gate length, because the number of poly-Si grain boundary defects was reduced.

原文	English
文章編號	P-12
頁（從 - 到）	268-271
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	36
發行號	1
DOIs	https://doi.org/10.1889/1.2036421
出版狀態	Published - 1 1月 2005
事件	SID Symposium Digest of Technical Papers - Boston, MA, 美國持續時間: 29 7月 2004 → 29 7月 2004

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10.1889/1.2036421

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@article{9b49ee30d1e749a49d1fd9fb07e76734,

title = "Mobility enhancement of pattern-dependent metal-induced lateral crystallization polysilicon thin-film transistors with different dimensions",

abstract = "A new method for enhancing the mobility of the polysilicon thin-film transistors (poly-Si TFT) by pattern-dependent metal-induced-lateral- crystallization (PDMILC) with different device dimensions were successfully demonstrated and characterized. The experimental results indicate that the field effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of its poly-Si grain was increased. For the gate length of 2 um, the ten nano-wire channels (MIO) PDMILC poly-Si TFT had the greatest mobility of 107.79 cm2/Vs and the smallest subthreshold swing (SS) of 0.23 V/dec. The mobility also increased with the decline in the gate length, because the number of poly-Si grain boundary defects was reduced.",

author = "Wu, {Yung Chun} and Wu, {Yuan Chun} and Chou, {Cheng Wei} and Tu, {Chun Hao} and Lou, {Jen Chung} and Chang, {Chun Yen} and Chang, {Ting Chang} and Po-Tsun Liu",

year = "2005",

month = jan,

day = "1",

doi = "10.1889/1.2036421",

language = "English",

volume = "36",

pages = "268--271",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "1",

note = "SID Symposium Digest of Technical Papers ; Conference date: 29-07-2004 Through 29-07-2004",

}

TY - JOUR

T1 - Mobility enhancement of pattern-dependent metal-induced lateral crystallization polysilicon thin-film transistors with different dimensions

AU - Wu, Yung Chun

AU - Wu, Yuan Chun

AU - Chou, Cheng Wei

AU - Tu, Chun Hao

AU - Lou, Jen Chung

AU - Chang, Chun Yen

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

PY - 2005/1/1

Y1 - 2005/1/1

N2 - A new method for enhancing the mobility of the polysilicon thin-film transistors (poly-Si TFT) by pattern-dependent metal-induced-lateral- crystallization (PDMILC) with different device dimensions were successfully demonstrated and characterized. The experimental results indicate that the field effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of its poly-Si grain was increased. For the gate length of 2 um, the ten nano-wire channels (MIO) PDMILC poly-Si TFT had the greatest mobility of 107.79 cm2/Vs and the smallest subthreshold swing (SS) of 0.23 V/dec. The mobility also increased with the decline in the gate length, because the number of poly-Si grain boundary defects was reduced.

AB - A new method for enhancing the mobility of the polysilicon thin-film transistors (poly-Si TFT) by pattern-dependent metal-induced-lateral- crystallization (PDMILC) with different device dimensions were successfully demonstrated and characterized. The experimental results indicate that the field effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of its poly-Si grain was increased. For the gate length of 2 um, the ten nano-wire channels (MIO) PDMILC poly-Si TFT had the greatest mobility of 107.79 cm2/Vs and the smallest subthreshold swing (SS) of 0.23 V/dec. The mobility also increased with the decline in the gate length, because the number of poly-Si grain boundary defects was reduced.

UR - http://www.scopus.com/inward/record.url?scp=32144445253&partnerID=8YFLogxK

U2 - 10.1889/1.2036421

DO - 10.1889/1.2036421

M3 - Conference article

AN - SCOPUS:32144445253

SN - 0097-966X

VL - 36

SP - 268

EP - 271

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

M1 - P-12

T2 - SID Symposium Digest of Technical Papers

Y2 - 29 July 2004 through 29 July 2004

ER -

Mobility enhancement of pattern-dependent metal-induced lateral crystallization polysilicon thin-film transistors with different dimensions

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