Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

Tsung Yi Lu; Tien-Sheng Chao

doi:10.1109/LED.2005.845499

Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

Tsung Yi Lu^*, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G_M further to 29% more than the single-poly-Si gate structure without SiN capping layer.

原文	English
頁（從 - 到）	267-269
頁數	3
期刊	IEEE Electron Device Letters
卷	26
發行號	4
DOIs	https://doi.org/10.1109/LED.2005.845499
出版狀態	Published - 1 4月 2005

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N2 - A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the GM further to 29% more than the single-poly-Si gate structure without SiN capping layer.

AB - A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the GM further to 29% more than the single-poly-Si gate structure without SiN capping layer.

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KW - Strain

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JF - IEEE Electron Device Letters

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Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

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