Mix-and-match lithography technology on 6-in. wafers for nanofabrication

  • Shyi Long Shy*
  • , Tien-Sheng Chao
  • , C. H. Chu
  • , T. F. Lei
  • , Kazumitsu Nakamura
  • , Wen An Loong
  • , C. Y. Chang
  • *此作品的通信作者

研究成果: Conference contribution同行評審

摘要

This work describes the mix-and-match lithography technology for 0.1 micrometer device fabrication including a resist patterning process using a G-line stepper and an e-beam lithography system on 6 inch wafers, device pattern layout and device fabrication. A high resolution positive type e-beam resist combined with a high throughput G-line stepper is found to be ideally suitable for fabricating a device with nanometer scale.

原文English
主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
編輯Gilbert V. Shelden, James N. Wiley
頁面406-412
頁數7
DOIs
出版狀態Published - 1 12月 1995
事件15th Annual BACUS Symposium on Photomask Technology and Management - Santa Clara, CA, USA
持續時間: 20 9月 199522 9月 1995

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
2621
ISSN(列印)0277-786X

Conference

Conference15th Annual BACUS Symposium on Photomask Technology and Management
城市Santa Clara, CA, USA
期間20/09/9522/09/95

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