Mix-and-match lithography technology on 6-in. wafers for nanofabrication

Shyi Long Shy; Tien-Sheng Chao; C. H. Chu; T. F. Lei; Kazumitsu Nakamura; Wen An Loong; C. Y. Chang

doi:10.1117/12.228194

Mix-and-match lithography technology on 6-in. wafers for nanofabrication

Shyi Long Shy^*, Tien-Sheng Chao, C. H. Chu, T. F. Lei, Kazumitsu Nakamura, Wen An Loong, C. Y. Chang

^*此作品的通信作者

電子物理學系

研究成果: Conference contribution › 同行評審

摘要

This work describes the mix-and-match lithography technology for 0.1 micrometer device fabrication including a resist patterning process using a G-line stepper and an e-beam lithography system on 6 inch wafers, device pattern layout and device fabrication. A high resolution positive type e-beam resist combined with a high throughput G-line stepper is found to be ideally suitable for fabricating a device with nanometer scale.

原文	English
主出版物標題	Proceedings of SPIE - The International Society for Optical Engineering
編輯	Gilbert V. Shelden, James N. Wiley
頁面	406-412
頁數	7
DOIs	https://doi.org/10.1117/12.228194
出版狀態	Published - 1 12月 1995
事件	15th Annual BACUS Symposium on Photomask Technology and Management - Santa Clara, CA, USA 持續時間: 20 9月 1995 → 22 9月 1995

出版系列

名字	Proceedings of SPIE - The International Society for Optical Engineering
卷	2621
ISSN（列印）	0277-786X

Conference

Conference	15th Annual BACUS Symposium on Photomask Technology and Management
城市	Santa Clara, CA, USA
期間	20/09/95 → 22/09/95

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10.1117/12.228194

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Shy, S. L., Chao, T-S., Chu, C. H., Lei, T. F., Nakamura, K., Loong, W. A., & Chang, C. Y. (1995). Mix-and-match lithography technology on 6-in. wafers for nanofabrication. 於 G. V. Shelden, & J. N. Wiley (編輯), Proceedings of SPIE - The International Society for Optical Engineering (頁 406-412). (Proceedings of SPIE - The International Society for Optical Engineering; 卷 2621). https://doi.org/10.1117/12.228194

@inproceedings{225765f88e364e64b03bb53a089e56f2,

title = "Mix-and-match lithography technology on 6-in. wafers for nanofabrication",

abstract = "This work describes the mix-and-match lithography technology for 0.1 micrometer device fabrication including a resist patterning process using a G-line stepper and an e-beam lithography system on 6 inch wafers, device pattern layout and device fabrication. A high resolution positive type e-beam resist combined with a high throughput G-line stepper is found to be ideally suitable for fabricating a device with nanometer scale.",

author = "Shy, {Shyi Long} and Tien-Sheng Chao and Chu, {C. H.} and Lei, {T. F.} and Kazumitsu Nakamura and Loong, {Wen An} and Chang, {C. Y.}",

year = "1995",

month = dec,

day = "1",

doi = "10.1117/12.228194",

language = "English",

isbn = "0819419850",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "406--412",

editor = "Shelden, {Gilbert V.} and Wiley, {James N.}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "null ; Conference date: 20-09-1995 Through 22-09-1995",

}

Shy, SL, Chao, T-S, Chu, CH, Lei, TF, Nakamura, K, Loong, WA & Chang, CY 1995, Mix-and-match lithography technology on 6-in. wafers for nanofabrication. 於 GV Shelden & JN Wiley (編輯), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, 卷 2621, 頁 406-412, 15th Annual BACUS Symposium on Photomask Technology and Management, Santa Clara, CA, USA, 20/09/95. https://doi.org/10.1117/12.228194

Mix-and-match lithography technology on 6-in. wafers for nanofabrication. / Shy, Shyi Long; Chao, Tien-Sheng; Chu, C. H. 等.

Proceedings of SPIE - The International Society for Optical Engineering. 編輯 / Gilbert V. Shelden; James N. Wiley. 1995. p. 406-412 (Proceedings of SPIE - The International Society for Optical Engineering; 卷 2621).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Mix-and-match lithography technology on 6-in. wafers for nanofabrication

AU - Shy, Shyi Long

AU - Chao, Tien-Sheng

AU - Chu, C. H.

AU - Lei, T. F.

AU - Nakamura, Kazumitsu

AU - Loong, Wen An

AU - Chang, C. Y.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - This work describes the mix-and-match lithography technology for 0.1 micrometer device fabrication including a resist patterning process using a G-line stepper and an e-beam lithography system on 6 inch wafers, device pattern layout and device fabrication. A high resolution positive type e-beam resist combined with a high throughput G-line stepper is found to be ideally suitable for fabricating a device with nanometer scale.

AB - This work describes the mix-and-match lithography technology for 0.1 micrometer device fabrication including a resist patterning process using a G-line stepper and an e-beam lithography system on 6 inch wafers, device pattern layout and device fabrication. A high resolution positive type e-beam resist combined with a high throughput G-line stepper is found to be ideally suitable for fabricating a device with nanometer scale.

UR - http://www.scopus.com/inward/record.url?scp=0029492830&partnerID=8YFLogxK

U2 - 10.1117/12.228194

DO - 10.1117/12.228194

M3 - Conference contribution

AN - SCOPUS:0029492830

SN - 0819419850

SN - 9780819419859

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 406

EP - 412

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Shelden, Gilbert V.

A2 - Wiley, James N.

Y2 - 20 September 1995 through 22 September 1995

ER -

Mix-and-match lithography technology on 6-in. wafers for nanofabrication

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