TY - JOUR
T1 - Mix-and-match lithography processes for 0.1 μm MOS transistor device fabrication
AU - Yew, Jen Yu
AU - Chen, Lih Juann
AU - Nakamura, Kazumitsu
AU - Chao, Tien-Sheng
AU - Lin, Horng-Chih
PY - 1996
Y1 - 1996
N2 - The mix-and-match method is an effective method to meet the requirements of minimizing the exposure time and the feature size, in which only the critical gate layer is exposured by electron beam lithography system, and the other ones by conventional g-line stepper. The negative type chemically amplified resist SAL601, made by Shipley, has been used for gate fabrication. The optimum conditions for the electron beam lithography including mark dimension, resist process and etching process have been investigated. The accelerating voltage and the beam current were fixed to be 40 kV and 0.25 nA, respectively. The mark of the electron beam lithography has the trench cross shape of 0.5 μm in depth, 20 μm in length and 3 μm in width. The sensitivity of SAL601 resist has been 20 μC/cm2 for 0.1 μm patterning at 40 kV accelerating voltage. The polysilicon gate was etched by electron cyclotron resonance (ECR) with SiO2 thin mask in HBr/O2 gas, for the appropriate anisotropy of etching and for the polysilicon-to-oxide selectivity of HBr/O2 gas plasma. The well defined profile of polysilicon gate with 0.1 μm width has been obtained successfully.
AB - The mix-and-match method is an effective method to meet the requirements of minimizing the exposure time and the feature size, in which only the critical gate layer is exposured by electron beam lithography system, and the other ones by conventional g-line stepper. The negative type chemically amplified resist SAL601, made by Shipley, has been used for gate fabrication. The optimum conditions for the electron beam lithography including mark dimension, resist process and etching process have been investigated. The accelerating voltage and the beam current were fixed to be 40 kV and 0.25 nA, respectively. The mark of the electron beam lithography has the trench cross shape of 0.5 μm in depth, 20 μm in length and 3 μm in width. The sensitivity of SAL601 resist has been 20 μC/cm2 for 0.1 μm patterning at 40 kV accelerating voltage. The polysilicon gate was etched by electron cyclotron resonance (ECR) with SiO2 thin mask in HBr/O2 gas, for the appropriate anisotropy of etching and for the polysilicon-to-oxide selectivity of HBr/O2 gas plasma. The well defined profile of polysilicon gate with 0.1 μm width has been obtained successfully.
KW - Alignment mark
KW - Chemically amplified resist
KW - Electron beam lithography
KW - Electron cyclotron resonance
KW - Helicon wave plasma
KW - Mix-and-match
UR - http://www.scopus.com/inward/record.url?scp=0030316314&partnerID=8YFLogxK
U2 - 10.1117/12.240468
DO - 10.1117/12.240468
M3 - Conference article
AN - SCOPUS:0030316314
SN - 0277-786X
VL - 2723
SP - 180
EP - 188
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Electron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI
Y2 - 11 March 1996 through 13 March 1996
ER -