Mitigating DIBL and Short-Channel Effects for III-V FinFETs with Negative-Capacitance Effects

Keyphrases

• Bias Dependence 33%
• Carbon Nanotube Field Effect Transistor (CNTFET) 66%
• Drain Bias 33%
• Drain Current Model 33%
• Fin Field-effect Transistor (FinFET) 33%
• Gate Length 33%
• High-mobility Channel 33%
• III-V Channel 33%
• III-V FinFET 100%
• InGaAs 66%
• InGaAs FinFET 33%
• Logic Devices 33%
• Negative Capacitance 100%
• Paper-based 33%
• Potential Profile 33%
• Power Scaling 33%
• Quantum Confinement 33%
• Quantum Source 33%
• Short Channel Effects 100%
• Source-to-drain Tunneling 33%
• Sub-20 Nm 33%
• Subthreshold Drain Current 33%
• Subthreshold Swing 33%
• Supply Voltage 33%
• Technology Node 33%
• Tunneling Distance 33%
• Voltage Power 33%

Engineering

• Current Drain 33%
• Drain Bias 33%
• Gate Length 33%
• Indium Gallium Arsenide 100%
• Nodes 33%
• Quantum Confinement 33%
• Quantum Source 33%
• Supply Voltage 33%
• Tunnel Construction 66%