TY - GEN
T1 - Miniband formulation of bilayer type II Ge/Si quantum dot superlattices
AU - Tsai, Yi Chia
AU - Lee, Ming Yi
AU - Li, Yi-ming
AU - Samukawa, Seiji
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - This article presents a computational study on the impact of layer distance on the miniband formulation and density of state under different quantum dot structural parameters-height, interdot space-in a bilayer and well-aligned Ge/Si quantum-dot array. The miniband bandwidth, energy and effective bandgap is tunable by introducing an additional quantum dot layer. When the vertical distance between layers is smaller than 2.0 nm, the individual band structure of each layer will separate and couple into a broader bandwidth. The effective bandgap decreases since the highest excited states, with broader bandwidth, mix with and become continuous energy levels.
AB - This article presents a computational study on the impact of layer distance on the miniband formulation and density of state under different quantum dot structural parameters-height, interdot space-in a bilayer and well-aligned Ge/Si quantum-dot array. The miniband bandwidth, energy and effective bandgap is tunable by introducing an additional quantum dot layer. When the vertical distance between layers is smaller than 2.0 nm, the individual band structure of each layer will separate and couple into a broader bandwidth. The effective bandgap decreases since the highest excited states, with broader bandwidth, mix with and become continuous energy levels.
UR - http://www.scopus.com/inward/record.url?scp=85006851597&partnerID=8YFLogxK
U2 - 10.1109/NANO.2016.7751492
DO - 10.1109/NANO.2016.7751492
M3 - Conference contribution
AN - SCOPUS:85006851597
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 891
EP - 894
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -