Millimeter-Wave single-pole-double-throw switch design with Stacked-FET topology using network cascading analysis

In this paper, the correlation between the key performance of the shunt-type single-pole-double-throw (SPDT) switch circuitry and the intrinsic device parameters is theoretically investigated by network cascading approach. Through rigorous analysis, we concluded that the intrinsic device parameters such as the gate-to-drain capacitance (C_gd) have direct impact on the performance due to the scaling of the gate length. The analysis results were verified by the implementation of an SPDT switch at millimeter-wave frequency using stacked-FET topology. An input power at 1-dB compression point (P_1dB) of greater than 30 dBm was measured from 15 to 35 GHz, exhibiting an enhancement of 6-dB in comparison with the conventional topology.