MILC-TFT with high-κ dielectrics for one-time-programmable memory application

Tsung Yu Chiang*, Ming Wen Ma, Yi Hong Wu, Po Yi Kuo, Kuan Ti Wang, Chia Chun Liao, Chi Ruei Yeh, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-κ dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage V th ∼ -0.78 V, excellent subthreshold swing ∼105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.

原文English
頁(從 - 到)954-956
頁數3
期刊IEEE Electron Device Letters
30
發行號9
DOIs
出版狀態Published - 7 8月 2009

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