跳至主導覽
跳至搜尋
跳過主要內容
國立陽明交通大學研發優勢分析平台 首頁
English
中文
首頁
人員
單位
研究成果
計畫
獎項
活動
貴重儀器
影響
按專業知識、姓名或所屬機構搜尋
Mid-infrared photonic-crystal surface-emitting lasers with InGaAs/GaAsSb 'W'-type quantum wells grown on InP substrate
Zong Lin Li, Yuan Chi Kang,
Kuo-Jui Lin
*
, Chien Ping Lee
*
此作品的通信作者
電子研究所
研究成果
:
Article
›
同行評審
3
引文 斯高帕斯(Scopus)
總覽
指紋
指紋
深入研究「Mid-infrared photonic-crystal surface-emitting lasers with InGaAs/GaAsSb 'W'-type quantum wells grown on InP substrate」主題。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Quantum Well
100%
Mid-infrared
100%
InGaAs
100%
Photonic-crystal Surface-emitting Laser
100%
GaAsSb
100%
W-type
100%
InP Substrate
100%
Lattice Period
66%
Lasing Emission
66%
PCSEL
66%
Fill Factor
33%
Wavelength Range
33%
Temperature Effect
33%
Characteristic Temperature
33%
Etching Depth
33%
Photonic Crystal
33%
Lasing Wavelength
33%
Wavelength Detuning
33%
Optical Pumping
33%
InP-based
33%
Laser Characteristics
33%
Room Temperature Lasing
33%
Wavelength Shift
33%
Laser Device
33%
Crystallographic Parameters
33%
Cavity Resonance
33%
Photonic Crystal Cavity
33%
Engineering
Quantum Well
100%
Photonics
100%
Emitting Laser
100%
Indium Gallium Arsenide
100%
Crystal Surface
100%
Room Temperature
25%
Lasing Wavelength
25%
Etch Depth
25%
Photonic Crystal Cavity
25%
Physics
Quantum Wells
100%
Surface Emitting Laser
100%
Crystal Surface
100%
Photonic Crystal
100%
Lasing
80%
Room Temperature
20%
Optical Pumping
20%
Temperature Characteristics
20%
Material Science
Quantum Well
100%
Indium Gallium Arsenide
100%
Surface (Surface Science)
100%
Photonic Crystal
100%
Optical Pumping
20%