Mid-infrared photonic-crystal surface-emitting lasers with InGaAs/GaAsSb 'W'-type quantum wells grown on InP substrate

Zong Lin Li; Yuan Chi Kang; Kuo-Jui Lin; Chien Ping Lee

doi:10.3390/photonics5040032

Mid-infrared photonic-crystal surface-emitting lasers with InGaAs/GaAsSb 'W'-type quantum wells grown on InP substrate

Zong Lin Li, Yuan Chi Kang, Kuo-Jui Lin^*, Chien Ping Lee

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

InP-based InGaAs/GaAsSb 'W'-type quantum well (QW) photonic-crystal (PC) surface-emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.

原文	English
文章編號	32
期刊	Photonics
卷	5
發行號	4
DOIs	https://doi.org/10.3390/photonics5040032
出版狀態	Published - 2 10月 2018

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10.3390/photonics5040032

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@article{569d188a1b6e402282d033c8e9f58aba,

title = "Mid-infrared photonic-crystal surface-emitting lasers with InGaAs/GaAsSb 'W'-type quantum wells grown on InP substrate",

abstract = "InP-based InGaAs/GaAsSb 'W'-type quantum well (QW) photonic-crystal (PC) surface-emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.",

keywords = "Mid-infrared lasers, Photonic crystals, Quantum wells, Surface-emitting lasers",

author = "Li, {Zong Lin} and Kang, {Yuan Chi} and Kuo-Jui Lin and Lee, {Chien Ping}",

year = "2018",

month = oct,

day = "2",

doi = "10.3390/photonics5040032",

language = "English",

volume = "5",

journal = "Photonics",

issn = "2304-6732",

publisher = "MDPI AG",

number = "4",

}

TY - JOUR

T1 - Mid-infrared photonic-crystal surface-emitting lasers with InGaAs/GaAsSb 'W'-type quantum wells grown on InP substrate

AU - Li, Zong Lin

AU - Kang, Yuan Chi

AU - Lin, Kuo-Jui

AU - Lee, Chien Ping

PY - 2018/10/2

Y1 - 2018/10/2

N2 - InP-based InGaAs/GaAsSb 'W'-type quantum well (QW) photonic-crystal (PC) surface-emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.

AB - InP-based InGaAs/GaAsSb 'W'-type quantum well (QW) photonic-crystal (PC) surface-emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.

KW - Mid-infrared lasers

KW - Photonic crystals

KW - Quantum wells

KW - Surface-emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=85058675168&partnerID=8YFLogxK

U2 - 10.3390/photonics5040032

DO - 10.3390/photonics5040032

M3 - Article

AN - SCOPUS:85058675168

SN - 2304-6732

VL - 5

JO - Photonics

JF - Photonics

IS - 4

M1 - 32

ER -

Mid-infrared photonic-crystal surface-emitting lasers with InGaAs/GaAsSb 'W'-type quantum wells grown on InP substrate

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