@inproceedings{ce45bfeba217499593158c3fc0a335c2,
title = "Microwave annealing",
abstract = "Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, 31P, and BF 2 implants in Si substrate were annealed by MWA at temperatures below 550°C.",
keywords = "dopant activation, low temperature, microwave, MWA, SPEG",
author = "Lee, {Yao Jen} and Cho, {T. C.} and Chuang, {S. S.} and Hsueh, {F. K.} and Lu, {Y. L.} and Sung, {P. J.} and Chen, {S. J.} and Lo, {C. H.} and Lai, {C. H.} and Current, {Michael I.} and Tseung-Yuen Tseng and Tien-Sheng Chao and Yang, {F. L.}",
year = "2012",
month = dec,
day = "1",
doi = "10.1063/1.4766505",
language = "English",
isbn = "9780735411098",
series = "AIP Conference Proceedings",
pages = "123--128",
booktitle = "Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology",
note = "null ; Conference date: 25-06-2012 Through 29-06-2012",
}