Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.
|出版狀態||Published - 1 一月 2013|
|事件||2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan|
持續時間: 6 六月 2013 → 7 六月 2013
|Conference||2013 13th International Workshop on Junction Technology, IWJT 2013|
|期間||6/06/13 → 7/06/13|