Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Michael I. Current, Yao Jen Lee, Yu Lun Lu, Ta Chun Cho, Tien-Sheng Chao, Hiroshi Onoda, Karuppanan Sekar, Nobuhiro Tokoro

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

原文English
頁面84-87
頁數4
DOIs
出版狀態Published - 1 一月 2013
事件2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan
持續時間: 6 六月 20137 六月 2013

Conference

Conference2013 13th International Workshop on Junction Technology, IWJT 2013
國家/地區Japan
城市Kyoto
期間6/06/137/06/13

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