Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Michael I. Current; Yao Jen Lee; Yu Lun Lu; Ta Chun Cho; Tien-Sheng Chao; Hiroshi Onoda; Karuppanan Sekar; Nobuhiro Tokoro

doi:10.1109/IWJT.2013.6644511

Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Michael I. Current, Yao Jen Lee, Yu Lun Lu, Ta Chun Cho, Tien-Sheng Chao, Hiroshi Onoda, Karuppanan Sekar, Nobuhiro Tokoro

電子物理學系

研究成果: Paper › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C₇H₇) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

原文	English
頁面	84-87
頁數	4
DOIs	https://doi.org/10.1109/IWJT.2013.6644511
出版狀態	Published - 1 1月 2013
事件	2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan 持續時間: 6 6月 2013 → 7 6月 2013

Conference

Conference	2013 13th International Workshop on Junction Technology, IWJT 2013
國家/地區	Japan
城市	Kyoto
期間	6/06/13 → 7/06/13

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10.1109/IWJT.2013.6644511

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引用此

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title = "Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions",

abstract = "Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.",

keywords = "Cluster carbon, Microwave anneal, Molecular carbon, Phosphorous doping",

author = "Current, {Michael I.} and Lee, {Yao Jen} and Lu, {Yu Lun} and Cho, {Ta Chun} and Tien-Sheng Chao and Hiroshi Onoda and Karuppanan Sekar and Nobuhiro Tokoro",

year = "2013",

month = jan,

day = "1",

doi = "10.1109/IWJT.2013.6644511",

language = "English",

pages = "84--87",

note = "null ; Conference date: 06-06-2013 Through 07-06-2013",

}

TY - CONF

T1 - Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

AU - Current, Michael I.

AU - Lee, Yao Jen

AU - Lu, Yu Lun

AU - Cho, Ta Chun

AU - Chao, Tien-Sheng

AU - Onoda, Hiroshi

AU - Sekar, Karuppanan

AU - Tokoro, Nobuhiro

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

AB - Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

KW - Cluster carbon

KW - Microwave anneal

KW - Molecular carbon

KW - Phosphorous doping

UR - http://www.scopus.com/inward/record.url?scp=84898656919&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2013.6644511

DO - 10.1109/IWJT.2013.6644511

M3 - Paper

AN - SCOPUS:84898656919

SP - 84

EP - 87

Y2 - 6 June 2013 through 7 June 2013

ER -

Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

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