Microstructural development of the AlN/Ti diffusion couple annealed at 1000°C

Chia Hsiang Chiu, Chien-Cheng Lin*


研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)


The microstructural development of an AlN/Ti diffusion couple, annealed at 1000°C in an argon atmosphere for 0.1-36 h, was investigated using analytical scanning electron microscopy and transmission electron microscopy. The decomposition and diffusion of Al and N atoms into Ti gave rise to various reaction layers at the interface. A δ-TiN layer was initially formed in the reaction zone between AlN and Ti, and the α2-Ti 3Al layer subsequently developed between δ-TiN and Ti. Then an intergranular τ1-Ti3AlN phase was formed in the δ-TiN layer with the orientation relationships [111]τ1 - Ti3 AlN//[111]δ - TiN and (110) τ1 - Ti3 AlN//(110) δ - TiN. The further diffusion of N atoms into the α2-Ti3Al layer led to the growth of δ-TiN and a twinned α2-Ti3Al(N) solid solution, wherein N atoms went to one of the octahedral interstitial sites in an orderly manner upon cooling, resulting in the formation of τ1-Ti3AlN. The orientation relationships between τ1-Ti3AlN and α2-Ti3Al(N) were [111]τ1 - Ti 3 AlN// [0001]α2 - Ti3Al (N) and (011)τ1 - Ti3AlN//(1120) α2 - Ti3Al(N). Finally, diffusion paths are proposed for the interfacial reactions at various stages.

頁(從 - 到)1273-1280
期刊Journal of the American Ceramic Society
出版狀態Published - 1 四月 2008


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