Microphotoluminescence spectra of hillocks in Al0.11Ga 0.89N films

W. C. Ke; C. S. Ku; H. Y. Huang; W. C. Chen; L. Lee; Wei-Kuo Chen; Wu-Ching Chou; W. H. Chen; M. C. Lee; W. J. Lin; Y. C. Cheng; Y. T. Cherng

doi:10.1063/1.1802379

Microphotoluminescence spectra of hillocks in Al_0.11Ga _0.89N films

W. C. Ke^*, C. S. Ku, H. Y. Huang, W. C. Chen, L. Lee, Wei-Kuo Chen, Wu-Ching Chou, W. H. Chen, M. C. Lee, W. J. Lin, Y. C. Cheng, Y. T. Cherng

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The spatial variation of the optical properties of hillocks in Al _0.11Ga_0.89N films has been studied by using microphotoluminescence (μ-PL) microscopy. The μ-PL spectrum revealed a strong emission (I_H) at 351 nm from the hillock, besides the near-band-edge emission (I_nbe) at 341 nm. Moreover, the I_H intensity increases significantly and its full width at half maximum decreases from ∼76 to ∼53 meV by probing across the hillock center. These indicated that the hillock structure is a strong emission center. The temperature-dependent μ-PL measurements showed that the I_H also has the S-shape behavior with a transition temperature of ∼120 K which is lower than that of I_nbe. The redshift of I_H is also smaller than I_nbe. Both indicated that the Al composition in hillocks is lower than the surrounding area.

原文	English
頁（從 - 到）	3047-3049
頁數	3
期刊	Applied Physics Letters
卷	85
發行號	15
DOIs	https://doi.org/10.1063/1.1802379
出版狀態	Published - 11 10月 2004

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@article{673f54d87a974e92b002e908ef747c2d,

title = "Microphotoluminescence spectra of hillocks in Al0.11Ga 0.89N films",

abstract = "The spatial variation of the optical properties of hillocks in Al 0.11Ga0.89N films has been studied by using microphotoluminescence (μ-PL) microscopy. The μ-PL spectrum revealed a strong emission (IH) at 351 nm from the hillock, besides the near-band-edge emission (Inbe) at 341 nm. Moreover, the IH intensity increases significantly and its full width at half maximum decreases from ∼76 to ∼53 meV by probing across the hillock center. These indicated that the hillock structure is a strong emission center. The temperature-dependent μ-PL measurements showed that the IH also has the S-shape behavior with a transition temperature of ∼120 K which is lower than that of Inbe. The redshift of IH is also smaller than Inbe. Both indicated that the Al composition in hillocks is lower than the surrounding area.",

author = "Ke, {W. C.} and Ku, {C. S.} and Huang, {H. Y.} and Chen, {W. C.} and L. Lee and Wei-Kuo Chen and Wu-Ching Chou and Chen, {W. H.} and Lee, {M. C.} and Lin, {W. J.} and Cheng, {Y. C.} and Cherng, {Y. T.}",

year = "2004",

month = oct,

day = "11",

doi = "10.1063/1.1802379",

language = "English",

volume = "85",

pages = "3047--3049",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Microphotoluminescence spectra of hillocks in Al0.11Ga 0.89N films

AU - Ke, W. C.

AU - Ku, C. S.

AU - Huang, H. Y.

AU - Chen, W. C.

AU - Lee, L.

AU - Chen, Wei-Kuo

AU - Chou, Wu-Ching

AU - Chen, W. H.

AU - Lee, M. C.

AU - Lin, W. J.

AU - Cheng, Y. C.

AU - Cherng, Y. T.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - The spatial variation of the optical properties of hillocks in Al 0.11Ga0.89N films has been studied by using microphotoluminescence (μ-PL) microscopy. The μ-PL spectrum revealed a strong emission (IH) at 351 nm from the hillock, besides the near-band-edge emission (Inbe) at 341 nm. Moreover, the IH intensity increases significantly and its full width at half maximum decreases from ∼76 to ∼53 meV by probing across the hillock center. These indicated that the hillock structure is a strong emission center. The temperature-dependent μ-PL measurements showed that the IH also has the S-shape behavior with a transition temperature of ∼120 K which is lower than that of Inbe. The redshift of IH is also smaller than Inbe. Both indicated that the Al composition in hillocks is lower than the surrounding area.

AB - The spatial variation of the optical properties of hillocks in Al 0.11Ga0.89N films has been studied by using microphotoluminescence (μ-PL) microscopy. The μ-PL spectrum revealed a strong emission (IH) at 351 nm from the hillock, besides the near-band-edge emission (Inbe) at 341 nm. Moreover, the IH intensity increases significantly and its full width at half maximum decreases from ∼76 to ∼53 meV by probing across the hillock center. These indicated that the hillock structure is a strong emission center. The temperature-dependent μ-PL measurements showed that the IH also has the S-shape behavior with a transition temperature of ∼120 K which is lower than that of Inbe. The redshift of IH is also smaller than Inbe. Both indicated that the Al composition in hillocks is lower than the surrounding area.

UR - http://www.scopus.com/inward/record.url?scp=8644286345&partnerID=8YFLogxK

U2 - 10.1063/1.1802379

DO - 10.1063/1.1802379

M3 - Article

AN - SCOPUS:8644286345

SN - 0003-6951

VL - 85

SP - 3047

EP - 3049

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Microphotoluminescence spectra of hillocks in Al0.11Ga 0.89N films

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Microphotoluminescence spectra of hillocks in Al_0.11Ga _0.89N films