Microdisks with quantum dot active regions lasing near 1300 nm at room temperature

T. Yang*, J. Cao, Po-Tsung Lee, M. Shih, R. Shafiiha, S. Farrell, J. O'Brien, O. Shchekin, D. Deppe

*此作品的通信作者

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

Lasing near 1300 nm in microdisks with InAs quantum dot active regions is reported for the first time. The microdisks were optically pumped at room temperature, and lasing occurred in devices that are 2.5 µm in diameter and larger.

原文English
頁面1276-1277
頁數2
出版狀態Published - 6月 2003
事件Conference on Lasers and Electro-Optics, CLEO 2003 - Baltimore, 美國
持續時間: 1 6月 20036 6月 2003

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2003
國家/地區美國
城市Baltimore
期間1/06/036/06/03

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