Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations

Yu Chen Hu, Cheng Hao Chiang, Kuo Hua Chen, Chi Tsung Chiu, Ching Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho Ming Tong, Kuan-Neng Chen*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this paper, a detailed examination on TSV and cavity inductive coupled plasma (ICP) etching is presented. We investigated the relation such as etching loop number, TSV etching depth and etching rate. Due to particles knocked off from the hard mask and then fallen down to the TSV and cavity bottom, micro-masking issue becomes serious after ICP etching. In addition, parameters of isotropic etching, pressure, and RF bias were studied to investigate the process of micro-masking removal.

原文English
主出版物標題2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
頁面367-369
頁數3
DOIs
出版狀態Published - 1 十二月 2012
事件2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan
持續時間: 24 十月 201226 十月 2012

出版系列

名字Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN(列印)2150-5934
ISSN(電子)2150-5942

Conference

Conference2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
國家/地區Taiwan
城市Taipei
期間24/10/1226/10/12

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