TY - JOUR
T1 - Micro-fabrication of hemispherical poly-silicon shells standing on hemispherical cavities
AU - Lin, Cheng Hsuan
AU - Lo, Yi Chung
AU - Hsu, Wen-Syang
PY - 2001
Y1 - 2001
N2 - In the current paper, the fabrication process of a novel proposed hemispherical polysilicon shell standing on a hemispherical silicon cavity is demonstrated. This micro-fabrication process combines both bulk and surface micromachining, which include the isotropic wet etching, a novel mask design, the thick photo resist coating and exposure, and high-aspect-ratio curved sacrificial technique. In isotropic wet etching of a hemispherical cavity, the optimal concentration of etchant is experimentally determined along with adequate ultrasonic vibration during wet etching to produce the circle-like of hemispherical cavity. The conventional alignment mark, which will be destroyed during the rather long isotropic wet etching process, is replaced by a novel mask design with the second alignment mark. Also, for a deep hemispherical cavity larger than 100 μm, the traditional photo resist can not be coated on the corner surface well. The thick photo resist, AZ4620, is found to be able to overcome this problem and be successfully exposed all through its bottom surface. Furthermore, the deposited sacrificial layer materials (PSG) on this cavity will usually result in thinner layer near the corner. In addition, the curved gap of PSG layer has the feature with high-aspect-ratio. These make the PSG etching difficult. Therefore, two steps etching process with two different hydrofluoric concentrations are used to release the PSG with 2 μm thickness and 150 μm arc length.
AB - In the current paper, the fabrication process of a novel proposed hemispherical polysilicon shell standing on a hemispherical silicon cavity is demonstrated. This micro-fabrication process combines both bulk and surface micromachining, which include the isotropic wet etching, a novel mask design, the thick photo resist coating and exposure, and high-aspect-ratio curved sacrificial technique. In isotropic wet etching of a hemispherical cavity, the optimal concentration of etchant is experimentally determined along with adequate ultrasonic vibration during wet etching to produce the circle-like of hemispherical cavity. The conventional alignment mark, which will be destroyed during the rather long isotropic wet etching process, is replaced by a novel mask design with the second alignment mark. Also, for a deep hemispherical cavity larger than 100 μm, the traditional photo resist can not be coated on the corner surface well. The thick photo resist, AZ4620, is found to be able to overcome this problem and be successfully exposed all through its bottom surface. Furthermore, the deposited sacrificial layer materials (PSG) on this cavity will usually result in thinner layer near the corner. In addition, the curved gap of PSG layer has the feature with high-aspect-ratio. These make the PSG etching difficult. Therefore, two steps etching process with two different hydrofluoric concentrations are used to release the PSG with 2 μm thickness and 150 μm arc length.
KW - Hemispherical cavity
KW - High-aspect-ratio
KW - Isotropic wet etching
KW - Polysilicon shells
UR - http://www.scopus.com/inward/record.url?scp=0035768561&partnerID=8YFLogxK
U2 - 10.1117/12.449010
DO - 10.1117/12.449010
M3 - Conference article
AN - SCOPUS:0035768561
SN - 0277-786X
VL - 4592
SP - 514
EP - 524
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Device and Process Technologies for MEMS and Microelectronics II
Y2 - 17 December 2001 through 19 December 2001
ER -