Mg-related deep levels in AlInP

Yu Rue Wu*, Wei Jer Sung, Shih Chang Lee, Tsang Jou Li, Wei-I Lee

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The properties of deep levels found in Mg-doped AllnP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled El and E2, were observed, with the activation energy of 0.19 and 0.514eV, respectively. From distribution profiles measured on trap El, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap El and E2 concentration increase with elevating Mg-dopant concentration. Thus, it seems that these deep levels originate from Mg-related"defects.

原文English
頁(從 - 到)4049-4050
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
發行號7 B
DOIs
出版狀態Published - 15 7月 1999

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