Mg-related deep levels in AlInP

Yu Rue Wu*, Wei Jer Sung, Shih Chang Lee, Tsang Jou Li, Wei-I Lee


研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)


The properties of deep levels found in Mg-doped AllnP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled El and E2, were observed, with the activation energy of 0.19 and 0.514eV, respectively. From distribution profiles measured on trap El, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap El and E2 concentration increase with elevating Mg-dopant concentration. Thus, it seems that these deep levels originate from Mg-related"defects.

頁(從 - 到)4049-4050
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
發行號7 B
出版狀態Published - 15 7月 1999


深入研究「Mg-related deep levels in AlInP」主題。共同形成了獨特的指紋。