Methodology of self-heating free parameter extraction and circuit simulation for SOI CMOS

H. Nakayama, Pin Su, Chen-Ming Hu, M. Nakamura, H. Komatsu, K. Takeshita, Y. Komatsu

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

Novel SOI (Silicon On Insulator) model parameter extraction methodology based on the concept of SHE (Self-Heating Effect) free device modeling, is proposed and demonstrated for a 0.18μm PD (Partially Depleted) SOI technology. In this methodology, prior to SPICE parameter extraction, the device thermal resistances are measured and the current loss due to SHE is added back analytically to dc IV data. Therefore, the parameters are free from SHE. Dc, ac, and transient simulation results using this technology show good agreement with measurement data.

原文English
頁(從 - 到)381-384
頁數4
期刊Proceedings of the Custom Integrated Circuits Conference
DOIs
出版狀態Published - 1 1月 2001

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