Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application

T. C. Chang*, T. M. Tsai, Po-Tsun Liu, S. T. Yan, Y. C. Chang, H. Aoki, S. M. Sze, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Article同行評審

摘要

In this work, characteristics of low-k methyl-silsesquiazane (MSZ) for the chemical-mechanical-planarization (CMP) process using oxygen plasma pretreatment were investigated in detail. The low-dielectric-constant (low-k) MSZ was prepared by a spin-on deposition process. The resultant wafers were followed by an oxygen (O2)(O2) plasma treatment. After oxygen plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O2O2 plasma pretreatment was increased as much as two times in magnitude, as compared to that of the MSZ without O2O2 plasma pretreatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated that the modification surfaces that resulted from O2O2-plasma treatment facilitated CMP MSZ. After CMP polishing, the MSZ film still maintained low-k quality

原文English
頁(從 - 到)1196-1201
頁數6
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
22
發行號3
DOIs
出版狀態Published - 1 5月 2004

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