Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology

Tai Xiang Lai; Ming-Dou Ker

doi:10.1109/ISQED.2006.85

Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology

Tai Xiang Lai, Ming-Dou Ker

研究成果: Conference contribution › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Cable discharge event (CDE) has been the main cause which damages the Ethernet interface in field applications. The transmission line pulsing (TLP) system has been the most popular method to observe electric characteristics of the device under human-body-model (HEM) electrostatic discharge (ESD) stress. In this work, the long-pulse transmission line pulsing (LP-TLP) system is proposed to simulate CDE reliability of the Ethernet integrated circuits, and the results are compared with the conventional 100-ns TLP system. The experimental results have shown that the CDE robustness of NMOS device in a 0.25-/spl mu/m CMOS technology is worse than its HBMESD robustness.

原文	English
主出版物標題	Proceedings - 7th International Symposium on Quality Electronic Design, ISQED 2006
頁面	597-602
頁數	6
DOIs	https://doi.org/10.1109/ISQED.2006.85
出版狀態	Published - 1 12月 2006
事件	7th International Symposium on Quality Electronic Design, ISQED 2006 - San Jose, CA, United States 持續時間: 27 3月 2006 → 29 3月 2006

出版系列

名字	Proceedings - International Symposium on Quality Electronic Design, ISQED
ISSN（列印）	1948-3287
ISSN（電子）	1948-3295

Conference

Conference	7th International Symposium on Quality Electronic Design, ISQED 2006
國家/地區	United States
城市	San Jose, CA
期間	27/03/06 → 29/03/06

存取文件

10.1109/ISQED.2006.85

其它文件與鏈接

Link to publication in Scopus

引用此

@inproceedings{a14edc804d354f1bbb0d77eaa86cfb10,

title = "Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology",

abstract = "Cable discharge event (CDE) has been the main cause which damages the Ethernet interface in field applications. The transmission line pulsing (TLP) system has been the most popular method to observe electric characteristics of the device under human-body-model (HEM) electrostatic discharge (ESD) stress. In this work, the long-pulse transmission line pulsing (LP-TLP) system is proposed to simulate CDE reliability of the Ethernet integrated circuits, and the results are compared with the conventional 100-ns TLP system. The experimental results have shown that the CDE robustness of NMOS device in a 0.25-/spl mu/m CMOS technology is worse than its HBMESD robustness.",

author = "Lai, {Tai Xiang} and Ming-Dou Ker",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/ISQED.2006.85",

language = "English",

isbn = "0769525237",

series = "Proceedings - International Symposium on Quality Electronic Design, ISQED",

pages = "597--602",

booktitle = "Proceedings - 7th International Symposium on Quality Electronic Design, ISQED 2006",

note = "7th International Symposium on Quality Electronic Design, ISQED 2006 ; Conference date: 27-03-2006 Through 29-03-2006",

}

Lai, TX & Ker, M-D 2006, Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology. 於 Proceedings - 7th International Symposium on Quality Electronic Design, ISQED 2006., 1613203, Proceedings - International Symposium on Quality Electronic Design, ISQED, 頁 597-602, 7th International Symposium on Quality Electronic Design, ISQED 2006, San Jose, CA, United States, 27/03/06. https://doi.org/10.1109/ISQED.2006.85

Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology. / Lai, Tai Xiang; Ker, Ming-Dou.
Proceedings - 7th International Symposium on Quality Electronic Design, ISQED 2006. 2006. p. 597-602 1613203 (Proceedings - International Symposium on Quality Electronic Design, ISQED).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology

AU - Lai, Tai Xiang

AU - Ker, Ming-Dou

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Cable discharge event (CDE) has been the main cause which damages the Ethernet interface in field applications. The transmission line pulsing (TLP) system has been the most popular method to observe electric characteristics of the device under human-body-model (HEM) electrostatic discharge (ESD) stress. In this work, the long-pulse transmission line pulsing (LP-TLP) system is proposed to simulate CDE reliability of the Ethernet integrated circuits, and the results are compared with the conventional 100-ns TLP system. The experimental results have shown that the CDE robustness of NMOS device in a 0.25-/spl mu/m CMOS technology is worse than its HBMESD robustness.

AB - Cable discharge event (CDE) has been the main cause which damages the Ethernet interface in field applications. The transmission line pulsing (TLP) system has been the most popular method to observe electric characteristics of the device under human-body-model (HEM) electrostatic discharge (ESD) stress. In this work, the long-pulse transmission line pulsing (LP-TLP) system is proposed to simulate CDE reliability of the Ethernet integrated circuits, and the results are compared with the conventional 100-ns TLP system. The experimental results have shown that the CDE robustness of NMOS device in a 0.25-/spl mu/m CMOS technology is worse than its HBMESD robustness.

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U2 - 10.1109/ISQED.2006.85

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M3 - Conference contribution

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SN - 9780769525235

T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED

SP - 597

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BT - Proceedings - 7th International Symposium on Quality Electronic Design, ISQED 2006

T2 - 7th International Symposium on Quality Electronic Design, ISQED 2006

Y2 - 27 March 2006 through 29 March 2006

ER -

Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology

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