METHOD FOR GROWING EPITAXIAL DIAMOND

@misc{23047c666ff74ffa87cf55bfd42b90aa,

title = "METHOD FOR GROWING EPITAXIAL DIAMOND",

author = "Li Chang",

year = "2016",

month = may,

day = "24",

language = "English",

type = "Patent",

note = "US 9,347,149,B2",

}

Chang, L 5月. 24 2016, METHOD FOR GROWING EPITAXIAL DIAMOND, 專利號 US 9,347,149,B2.

研究成果: Patent

TY - PAT

T1 - METHOD FOR GROWING EPITAXIAL DIAMOND

AU - Chang, Li

PY - 2016/5/24

Y1 - 2016/5/24

M3 - Patent

M1 - US 9,347,149,B2

ER -

Chang L, 發明者. METHOD FOR GROWING EPITAXIAL DIAMOND. US 9,347,149,B2. 2016 5月 24.

引用此