Li Chang (Inventor)
研究成果: Patent
}
TY - PAT
T1 - METHOD FOR GROWING ALUMINUM INDIUM NITRIDE FILMS ON SILICON SUBSTRATE
AU - Chang, Li
PY - 2016/7/19
Y1 - 2016/7/19
M3 - Patent
M1 - US 9,396,936 B2
ER -