Methane exposure on the aluminum nitride gate dielectric in pentacene-based organic thin-film transistors

Cheng Wei Chou; Hsiao-Wen Zan; Chung Hwa Wang; Wei Tsung Chen; Li Shiuan Tsai; Wen Chieh Wang; Jenn Chang Hwang

doi:10.1149/1.3182823

Methane exposure on the aluminum nitride gate dielectric in pentacene-based organic thin-film transistors

Cheng Wei Chou^*, Hsiao-Wen Zan, Chung Hwa Wang, Wei Tsung Chen, Li Shiuan Tsai, Wen Chieh Wang, Jenn Chang Hwang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The device performance of a pentacene-based organic thin-film transistor (OTFT) fabricated on an aluminum nitride (AlN) surface can be improved by exposing AlN to a methane (CH₄) gas before device fabrication. The mobility of the OTFT was enhanced from 0.046 to 0.924 cm₂ /V s by exposing AlN to CH₄. Its threshold voltage was reduced from -4.5 to -1.9 V. After the CH₄ exposure, the reduced surface energy of AlN was correlated with the improvement of the OTFT performance. The reduction of surface energy was correlated with the replacement of O-CO bonds by C-O bonds and hydrocarbon (CH_x) on the AlN surface.

原文	English
期刊	Electrochemical and Solid-State Letters
卷	12
發行號	10
DOIs	https://doi.org/10.1149/1.3182823
出版狀態	Published - 24 8月 2009

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@article{f58b03b445e44f7f920b6e61a220c1c3,

title = "Methane exposure on the aluminum nitride gate dielectric in pentacene-based organic thin-film transistors",

abstract = "The device performance of a pentacene-based organic thin-film transistor (OTFT) fabricated on an aluminum nitride (AlN) surface can be improved by exposing AlN to a methane (CH4) gas before device fabrication. The mobility of the OTFT was enhanced from 0.046 to 0.924 cm2 /V s by exposing AlN to CH4. Its threshold voltage was reduced from -4.5 to -1.9 V. After the CH4 exposure, the reduced surface energy of AlN was correlated with the improvement of the OTFT performance. The reduction of surface energy was correlated with the replacement of O-CO bonds by C-O bonds and hydrocarbon (CHx) on the AlN surface.",

author = "Chou, {Cheng Wei} and Hsiao-Wen Zan and Wang, {Chung Hwa} and Chen, {Wei Tsung} and Tsai, {Li Shiuan} and Wang, {Wen Chieh} and Hwang, {Jenn Chang}",

year = "2009",

month = aug,

day = "24",

doi = "10.1149/1.3182823",

language = "English",

volume = "12",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "10",

}

TY - JOUR

T1 - Methane exposure on the aluminum nitride gate dielectric in pentacene-based organic thin-film transistors

AU - Chou, Cheng Wei

AU - Zan, Hsiao-Wen

AU - Wang, Chung Hwa

AU - Chen, Wei Tsung

AU - Tsai, Li Shiuan

AU - Wang, Wen Chieh

AU - Hwang, Jenn Chang

PY - 2009/8/24

Y1 - 2009/8/24

N2 - The device performance of a pentacene-based organic thin-film transistor (OTFT) fabricated on an aluminum nitride (AlN) surface can be improved by exposing AlN to a methane (CH4) gas before device fabrication. The mobility of the OTFT was enhanced from 0.046 to 0.924 cm2 /V s by exposing AlN to CH4. Its threshold voltage was reduced from -4.5 to -1.9 V. After the CH4 exposure, the reduced surface energy of AlN was correlated with the improvement of the OTFT performance. The reduction of surface energy was correlated with the replacement of O-CO bonds by C-O bonds and hydrocarbon (CHx) on the AlN surface.

AB - The device performance of a pentacene-based organic thin-film transistor (OTFT) fabricated on an aluminum nitride (AlN) surface can be improved by exposing AlN to a methane (CH4) gas before device fabrication. The mobility of the OTFT was enhanced from 0.046 to 0.924 cm2 /V s by exposing AlN to CH4. Its threshold voltage was reduced from -4.5 to -1.9 V. After the CH4 exposure, the reduced surface energy of AlN was correlated with the improvement of the OTFT performance. The reduction of surface energy was correlated with the replacement of O-CO bonds by C-O bonds and hydrocarbon (CHx) on the AlN surface.

UR - http://www.scopus.com/inward/record.url?scp=68949158229&partnerID=8YFLogxK

U2 - 10.1149/1.3182823

DO - 10.1149/1.3182823

M3 - Article

AN - SCOPUS:68949158229

SN - 1099-0062

VL - 12

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Methane exposure on the aluminum nitride gate dielectric in pentacene-based organic thin-film transistors

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