Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

C. K. Shu; W. H. Lee; Y. C. Pan; H. Y. Huang; H. H. Chen; W. H. Chen; Wei-Kuo Chen; M. C. Lee

doi:10.1117/12.392182

Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

C. K. Shu^*, W. H. Lee, Y. C. Pan, H. Y. Huang, H. H. Chen, W. H. Chen, Wei-Kuo Chen, M. C. Lee

^*此作品的通信作者

電子物理學系

研究成果: Conference article › 同行評審

摘要

The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.

原文	English
頁（從 - 到）	521-526
頁數	6
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	4078
DOIs	https://doi.org/10.1117/12.392182
出版狀態	Published - 7月 2000
事件	Optoelectronic Materials and Devices II - Taipei, Taiwan 持續時間: 26 7月 2000 → 28 7月 2000

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@article{7ad54e29a05941fbbee7ae9d909f1d43,

title = "Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy",

abstract = "The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.",

author = "Shu, {C. K.} and Lee, {W. H.} and Pan, {Y. C.} and Huang, {H. Y.} and Chen, {H. H.} and Chen, {W. H.} and Wei-Kuo Chen and Lee, {M. C.}",

year = "2000",

month = jul,

doi = "10.1117/12.392182",

language = "English",

volume = "4078",

pages = "521--526",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Optoelectronic Materials and Devices II ; Conference date: 26-07-2000 Through 28-07-2000",

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TY - JOUR

T1 - Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

AU - Shu, C. K.

AU - Lee, W. H.

AU - Pan, Y. C.

AU - Huang, H. Y.

AU - Chen, H. H.

AU - Chen, W. H.

AU - Chen, Wei-Kuo

AU - Lee, M. C.

PY - 2000/7

Y1 - 2000/7

N2 - The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.

AB - The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.

UR - http://www.scopus.com/inward/record.url?scp=0033725803&partnerID=8YFLogxK

U2 - 10.1117/12.392182

DO - 10.1117/12.392182

M3 - Conference article

AN - SCOPUS:0033725803

SN - 0277-786X

VL - 4078

SP - 521

EP - 526

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optoelectronic Materials and Devices II

Y2 - 26 July 2000 through 28 July 2000

ER -

Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

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