METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.

B. Y. Tsaur; J. W. Mayer; M. A. Nicolet; King-Ning Tu

doi:10.1080/01418618108239414

METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.

B. Y. Tsaur^*, J. W. Mayer, M. A. Nicolet, King-Ning Tu

^*此作品的通信作者

國際半導體產業學院

研究成果: Paper › 同行評審

6 引文斯高帕斯（Scopus）

摘要

An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.

原文	English
頁面	142-151
頁數	10
DOIs	https://doi.org/10.1080/01418618108239414
出版狀態	Published - 1 1月 1980
事件	Ion Implantation Metall, Proc of a Symp at Annu Meet of the Mater Res Soc - Cambridge, MA, Engl 持續時間: 30 11月 1979 → 30 11月 1979

Conference

Conference	Ion Implantation Metall, Proc of a Symp at Annu Meet of the Mater Res Soc
城市	Cambridge, MA, Engl
期間	30/11/79 → 30/11/79

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10.1080/01418618108239414

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title = "METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.",

abstract = "An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.",

author = "Tsaur, {B. Y.} and Mayer, {J. W.} and Nicolet, {M. A.} and King-Ning Tu",

year = "1980",

month = jan,

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doi = "10.1080/01418618108239414",

language = "English",

pages = "142--151",

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AU - Tsaur, B. Y.

AU - Mayer, J. W.

AU - Nicolet, M. A.

AU - Tu, King-Ning

PY - 1980/1/1

Y1 - 1980/1/1

N2 - An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.

AB - An amorphous alloy with a composition Au-28. 5 at. % Si (Au//5Si//2) has been formed by implanting energetic Xe, Ar and Ne ions through a thin layer of Au deposited on a Si substrate. The amorphous alloy phase was unstable at temperatures above 100 degree C and transformed into a metastable crystalline phase with a hexagonal crystal structure. This metastable phase then decomposed into an equilibrium mixture of Au and Si at higher annealing temperatures ( greater than 180 degree C). The sequential decomposition of the amorphous and metastable phases were also observed at room temperature but during several weeks. The atomic mechanisms involved in interface mixing are discussed. The results are compared with those obtained by rapid quenching techniques and thermal treatment of Au films on single crystal Si substrates.

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DO - 10.1080/01418618108239414

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EP - 151

Y2 - 30 November 1979 through 30 November 1979

ER -

METASTABLE Au-Si ALLOYS FORMATION INDUCED BY ION-BEAM INTERFACE MIXING.

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