The metalorganic chemical vapor deposition (MOCVD) of InSb using tri-neopentylindium (InNp3) is reported. The newly synthesized InNp^ has several advantages, e.g., easy to prepare, easy to purify, and non-pyrophoric, over the commonly used tri-ethylindium (TEIn) and tri-methylindium (TMIn). We report the MOCVD growth of InSb using InNp^. The InSb films were examined by double crystal x-ray diffraction, scanning electron microscope (SEM), and x-ray energy dispersive analysis. The results indicate that the deposited InSb films are stoichiometric and single crystal. The crystal quality and surface morphology are comparable to similar films grown from TMIn.
|頁（從 - 到）||21-24|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 18 5月 1988|