Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

Wei-Kuo Chen*, Jyh-Cheng Chen, L. Anthony, P. L. Liu

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

原文English
頁(從 - 到)987-989
頁數3
期刊Applied Physics Letters
55
發行號10
DOIs
出版狀態Published - 1 12月 1989

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