Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

Wei-Kuo Chen; Jyh-Cheng Chen; L. Anthony; P. L. Liu

doi:10.1063/1.101697

Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

Wei-Kuo Chen^*, Jyh-Cheng Chen, L. Anthony, P. L. Liu

^*此作品的通信作者

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

原文	English
頁（從 - 到）	987-989
頁數	3
期刊	Applied Physics Letters
卷	55
發行號	10
DOIs	https://doi.org/10.1063/1.101697
出版狀態	Published - 1 12月 1989

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10.1063/1.101697

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@article{be7932bd119844d9b2d1eaeda5a39f21,

title = "Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors",

abstract = "We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.",

author = "Wei-Kuo Chen and Jyh-Cheng Chen and L. Anthony and Liu, {P. L.}",

year = "1989",

month = dec,

day = "1",

doi = "10.1063/1.101697",

language = "English",

volume = "55",

pages = "987--989",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

AU - Chen, Wei-Kuo

AU - Chen, Jyh-Cheng

AU - Anthony, L.

AU - Liu, P. L.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

AB - We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=0343265582&partnerID=8YFLogxK

U2 - 10.1063/1.101697

DO - 10.1063/1.101697

M3 - Article

AN - SCOPUS:0343265582

VL - 55

SP - 987

EP - 989

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

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