We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.