摘要
Low-temperature-grown GaAs (LTG-GaAs) based photodetectors (PDs) draw significant attention due to their ultrahigh electrical bandwidth performances. A review is given of the advantages and applications of LTG-GaAs based metal-semiconductor-metal traveling wave photodetectors (MSMTWPDs). The ultra-high speed and record high power-bandwidth product performances in both short (∼800nm) and long (∼1300nm) wavelength regimes are discussed.
原文 | English |
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頁(從 - 到) | 445-446 |
頁數 | 2 |
期刊 | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
卷 | 2 |
DOIs | |
出版狀態 | Published - 2002 |
事件 | 2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, 英國 持續時間: 10 11月 2002 → 14 11月 2002 |