Metal-semiconductors-metal traveling wave photodetectors

Jin Wei Shi*, Yen Hung Chen, Tzu Ming Liu, Ming-Che Chan, Kian Giap Gan, Yi Jen Chiu, John E. Bowers, Chi Kuang Sun

*此作品的通信作者

研究成果: Conference article同行評審

摘要

Low-temperature-grown GaAs (LTG-GaAs) based photodetectors (PDs) draw significant attention due to their ultrahigh electrical bandwidth performances. A review is given of the advantages and applications of LTG-GaAs based metal-semiconductor-metal traveling wave photodetectors (MSMTWPDs). The ultra-high speed and record high power-bandwidth product performances in both short (∼800nm) and long (∼1300nm) wavelength regimes are discussed.

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