Metal-organic chemical vapor deposition of NbxTa(1-x)NyOmCn films as diffusion barriers for Cu metallization

W. C. Gau, C. W. Wu, T. C. Chang, Po-Tsun Liu, C. J. Chu, C. H. Chen, L. J. Chen*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

NbxTa(1-x)NyOmCn diffusion barriers deposited by chemical vapor deposition (CVD) for copper metallization have been investigated. The barriers were deposited at 375 °C with tetrakis-diethylamido-niobium and pentakis-diethylamido-tantalum as precursors. Amorphous thin films can be obtained by thermal deposition at temperatures from 500 to 600 °C. The activation energy of the metal-organic CVD (MOCVD) process was determined to be 79.1±4.8 kJ/mol. By the incorporation of NH3 gas into reactants, both MOCVD deposition temperature and carbon concentration in the NbxTa(1-x)NyOmCn films were reduced. In addition, NH3-plasma post-treatment was implemented to prevent oxygen from being introduced into the barrier films.

原文English
頁(從 - 到)548-552
頁數5
期刊Thin Solid Films
420-421
DOIs
出版狀態Published - 2 12月 2002

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