Metal nanowires self-assembly by dielectrophoretic and applications in optoelectronics

Ching Chang Lin; Ya Lin Lin; Wen Hsien Sun; Shao Yin Hu; Chieh Cheng; Chao-Hsin Chien; Zhi Long Chen; Chang Jung Chang; Jui Chen Liu; Chih Lung Chen; Fu-Hsiang Ko

Metal nanowires self-assembly by dielectrophoretic and applications in optoelectronics

Ching Chang Lin, Ya Lin Lin, Wen Hsien Sun, Shao Yin Hu, Chieh Cheng, Chao-Hsin Chien, Zhi Long Chen, Chang Jung Chang, Jui Chen Liu, Chih Lung Chen, Fu-Hsiang Ko^*

^*此作品的通信作者

研究成果 › 同行評審

摘要

This study presented a plasmonic solar cell with AuNR arrays upon the active layer to enhance the conversion efficiency. AuNRs in 20 nm diameters with aspect ratio of 20 were assembled into an array by an AC electric field generated by micrometer spaced electrodes which called dielectrophoresis force. The AuNRs increase light scattering and trapping in the silicon layers leading to enhancement of the external quantum efficiency. Additionally, the short-circuit current with appropriate design of electrodes is increased from 20.45 mA to 33.09 mA and the conversion efficiency is increased from 4.22% to 7.01% under the applied 20 Vpp.

原文	English
出版狀態	Published - 7月 2015
事件	20th International Conference on Composite Materials, ICCM 2015 - Copenhagen, 丹麥持續時間: 19 7月 2015 → 24 7月 2015

Conference

Conference	20th International Conference on Composite Materials, ICCM 2015
國家/地區	丹麥
城市	Copenhagen
期間	19/07/15 → 24/07/15

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title = "Metal nanowires self-assembly by dielectrophoretic and applications in optoelectronics",

abstract = "This study presented a plasmonic solar cell with AuNR arrays upon the active layer to enhance the conversion efficiency. AuNRs in 20 nm diameters with aspect ratio of 20 were assembled into an array by an AC electric field generated by micrometer spaced electrodes which called dielectrophoresis force. The AuNRs increase light scattering and trapping in the silicon layers leading to enhancement of the external quantum efficiency. Additionally, the short-circuit current with appropriate design of electrodes is increased from 20.45 mA to 33.09 mA and the conversion efficiency is increased from 4.22% to 7.01% under the applied 20 Vpp.",

keywords = "Dielectrophoretic, Metal Nanowires, Optoelectronics, Self-assemble",

author = "Lin, {Ching Chang} and Lin, {Ya Lin} and Sun, {Wen Hsien} and Hu, {Shao Yin} and Chieh Cheng and Chao-Hsin Chien and Chen, {Zhi Long} and Chang, {Chang Jung} and Liu, {Jui Chen} and Chen, {Chih Lung} and Fu-Hsiang Ko",

note = "Publisher Copyright: {\textcopyright} 2015 International Committee on Composite Materials. All rights reserved.; 20th International Conference on Composite Materials, ICCM 2015 ; Conference date: 19-07-2015 Through 24-07-2015",

year = "2015",

month = jul,

language = "English",

}

TY - CONF

T1 - Metal nanowires self-assembly by dielectrophoretic and applications in optoelectronics

AU - Lin, Ching Chang

AU - Lin, Ya Lin

AU - Sun, Wen Hsien

AU - Hu, Shao Yin

AU - Cheng, Chieh

AU - Chien, Chao-Hsin

AU - Chen, Zhi Long

AU - Chang, Chang Jung

AU - Liu, Jui Chen

AU - Chen, Chih Lung

AU - Ko, Fu-Hsiang

PY - 2015/7

Y1 - 2015/7

N2 - This study presented a plasmonic solar cell with AuNR arrays upon the active layer to enhance the conversion efficiency. AuNRs in 20 nm diameters with aspect ratio of 20 were assembled into an array by an AC electric field generated by micrometer spaced electrodes which called dielectrophoresis force. The AuNRs increase light scattering and trapping in the silicon layers leading to enhancement of the external quantum efficiency. Additionally, the short-circuit current with appropriate design of electrodes is increased from 20.45 mA to 33.09 mA and the conversion efficiency is increased from 4.22% to 7.01% under the applied 20 Vpp.

AB - This study presented a plasmonic solar cell with AuNR arrays upon the active layer to enhance the conversion efficiency. AuNRs in 20 nm diameters with aspect ratio of 20 were assembled into an array by an AC electric field generated by micrometer spaced electrodes which called dielectrophoresis force. The AuNRs increase light scattering and trapping in the silicon layers leading to enhancement of the external quantum efficiency. Additionally, the short-circuit current with appropriate design of electrodes is increased from 20.45 mA to 33.09 mA and the conversion efficiency is increased from 4.22% to 7.01% under the applied 20 Vpp.

KW - Dielectrophoretic

KW - Metal Nanowires

KW - Optoelectronics

KW - Self-assemble

UR - http://www.scopus.com/inward/record.url?scp=85053128670&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85053128670

T2 - 20th International Conference on Composite Materials, ICCM 2015

Y2 - 19 July 2015 through 24 July 2015

ER -

Metal nanowires self-assembly by dielectrophoretic and applications in optoelectronics

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